HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：264.99 Kbytes 页数：14 Pages

IRF

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：1.20988 Mbytes 页数：18 Pages

IRF

1200 V高边和低边栅极驱动器IC，具有启用和关断功能

1200 V 高边和低边驱动器 IC,具有典型的 2 A 拉电流和 2.5 A 灌电流，采用 14 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 16 引脚 SOIC 封装可选。 • 专为自举操作设计的浮动通道\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围：12 至 20V\n• 双通道欠压锁定\n• 3.3 V 逻辑兼容\n• 独立的逻辑供电电压范围：3.3 V 至 20 V\n• 逻辑和电源接地 +/- 5 V 偏移\n• 具有下拉的 CMOS 施密特触发输入\n• 逐周期边缘触发关断逻辑\n• 双通道的匹配传播延迟\n• 输出与输入同相\n\n优势:;

Infineon

英飞凌

Package：14-DIP（0.300"，7.62mm）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14DIP

Infineon

英飞凌

High and Low Side Driver in Die form

Features •Floating channel designed for bootstrap operation •Fully operational to +1200 V •Tolerant to negative transient voltage •dV/dt immune •Gate drive supply range from 12 V to 20 V •Undervoltage lockout for both channels •3.3 V logic compatible •Separate logic supply range from 3.3 V

文件：1.05681 Mbytes 页数：16 Pages

IRF

High and Low Side Driver in Die form

Features •Floating channel designed for bootstrap operation •Fully operational to +1200 V •Tolerant to negative transient voltage •dV/dt immune •Gate drive supply range from 12 V to 20 V •Undervoltage lockout for both channels •3.3 V logic compatible •Separate logic supply range from 3.3 V

文件：1.05681 Mbytes 页数：16 Pages

IRF

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：1.20988 Mbytes 页数：18 Pages

IRF

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：1.22362 Mbytes 页数：18 Pages

Infineon

英飞凌

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：1.22362 Mbytes 页数：18 Pages

Infineon

英飞凌

HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：439.23 Kbytes 页数：15 Pages

IRF