High and Low Side Driver in Die form

Features •Floating channel designed for bootstrap operation •Fully operational to +1200 V •Tolerant to negative transient voltage •dV/dt immune •Gate drive supply range from 12 V to 20 V •Undervoltage lockout for both channels •3.3 V logic compatible •Separate logic supply range from 3.3 V

文件：1.05681 Mbytes 页数：16 Pages

IRF

1200 V high- and low-side gate driver IC bare die for IGBT and MOSFET

• Floating channel up to 1200 V\n• dV/dt immune\n• Undervoltage lockout for both channels\n• Logic supply range from 3.3 V to 20 V\n• Matched propagation delay for channels\n• Safely drive 110 Vac to 380 Vac apps\n• UVLO protection at low supply voltage\n \n\n\n;

Infineon

英飞凌

SOP

IR

国际整流器

上传：深圳市勤思达科技有限公司

SOIC-8

英飞凌/实单必成

上传：深圳市拓芯泰电子科技有限公司

DIP

IR

国际整流器

上传：深圳市勤思达科技有限公司