Description

The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200 V.

Features

• Floating channel designed for bootstrap operation

• Fully operational to +1200 V

• Tolerant to negative transient voltage

• dV/dt immune

• Gate drive supply range from 12 V to 20 V

• Undervoltage lockout for both channels

• 3.3 V logic compatible

• Separate logic supply range from 3.3 V to 20 V

• Logic and power ground ±5 V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs

IR2213PBF属于集成电路（IC） > 栅极驱动器。英飞凌科技公司制造生产的IR2213PBF栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。