HIGH AND LOW SIDE DRIVER

Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：445.59 Kbytes 页数：21 Pages

Infineon

英飞凌

HIGH AND LOW SIDE DRIVER

Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS

文件：364.43 Kbytes 页数：21 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：264.99 Kbytes 页数：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：370.01 Kbytes 页数：21 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：445.59 Kbytes 页数：21 Pages

Infineon

英飞凌

HIGH AND LOW SIDE DRIVER

Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS

文件：364.43 Kbytes 页数：21 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：264.99 Kbytes 页数：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：370.01 Kbytes 页数：21 Pages

IRF

600 V high-side and low-side gate driver IC

600 V High and Low Side Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14-Lead PDIP . • Floating channel designed for bootstrap operation\n• Fully operational to +600 V\n• Tolerant to negative transient voltage\n• dV/dt immune\n• Gate drive supply range from 10 to 20 V\n• Undervoltage lockout for both channels\n• 3.3 V and 5 V input logic compatible\n• Matched propagation delay for b;

Infineon

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon

英飞凌