Description

The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features

• Floating channel designed for bootstrap operation

   Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V and 5V input logic compatible

• Matched propagation delay for both channels

• Logic and power ground +/- 5V offset.

• Lower di/dt gate driver for better noise immunity

• Output source/sink current capability 1.4A/1.8A

• Also available LEAD-FREE (PbF)

IR2181S属于集成电路（IC） > 栅极驱动器。英飞凌科技公司制造生产的IR2181S栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。