600 V single high-side gate driver IC with over current protection and fault reporting

600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. • Floating channel designed for bootstrap operation\n• Fully operational to +600 V\n• Tolerant to negative transient voltage dV/dt immune\n• Application - specific gate drive range: 12 to 20 V (IR2127, IR2128 Output out of phase with input (IR2128 )\n\n优势:;

Infineon

英飞凌

Package：8-DIP（0.300"，7.62mm）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRV HI-SIDE/LO-SIDE 8DIP

INFINEON

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HI/LOW SIDE 8SOIC

INFINEON

英飞凌