650V CoolMOS ™ N沟道汽车SJ功率MOSFET CFD7A

\n优势:\n• Highest reliability in the field meeting automotive lifetime requirements\n• Enabling of higher power density designs\n• Scalable as designed for use in PFC and DC-DC stage\n• Granular portfolio available;

Infineon

英飞凌

丝印：65A050F7；Package：PG-TO247-3；650V CoolMOS짧 CFD7A SJ Power Device

文件：1.58548 Mbytes 页数：14 Pages

INFINEON

英飞凌

MOSFET 650V CoolMOS짧 CFD7A SJ Power Device

文件：1.44516 Mbytes 页数：14 Pages

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

文件：332.84 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET 650V CoolMOS짧 CFD7A SJ Power Device

文件：1.42958 Mbytes 页数：14 Pages

INFINEON

英飞凌