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IPX65R660CFDA

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

HCD65R660S

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HCD65R660S

650VN-ChannelSuperJunctionMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HCS65R660S

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HCU65R660S

650VN-ChannelSuperJunctionMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IIPD65R660CFD

N-ChannelMOSFETTransistor

•DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP65R660CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW65R660CFD

N-ChannelMOSFETTransistor

•DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤660mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA65R660CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB65R660CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB65R660CFDA

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R660CFD

N-ChannelMOSFETTransistor

•DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R660CFDA

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
只做原装
21+
TQFP
36520
一级代理/放心采购
询价
XILINX/赛灵思
22+
TQFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
XFMRS
23+
原厂封装
9980
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
NEWINORIGINAL
2008++
DO-214
7300
新进库存/原装
询价
JAT
1923+
SMB
35689
原装进口现货库存专业工厂研究所配单供货
询价
JAT
23+
SMB
21580
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
N/A
2023+环保现货
SMB
1500
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
NEW
24+25+/26+27+
DO-214
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
DO-214
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
GISEMI
23+
TransferLine
50000
全新原装正品现货,支持订货
询价
更多IPX65R660CFDA供应商 更新时间2024-5-29 16:38:00