丝印：6R125C6；Package：PG-TO247；MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features * Extremely low losses due to very low FOM Rdson Qg and Eoss * Very high comutation ruggedness * Easy to ues/drive * JEDEC qualified, Pb-free plating, Halogen free

文件：1.26355 Mbytes 页数：18 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.125Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust d

文件：338.47 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤125mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.64 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：2.08463 Mbytes 页数：18 Pages

INFINEON

英飞凌