丝印：95R1K2；Package：PG-SOT223；MOSFET 950V CoolMOSª P7 SJ Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class SOT-223 RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Best-in-class CoolMOS™ quality and reliability • Fully optimized portfolio

文件：1.18156 Mbytes 页数：14 Pages

Infineon

英飞凌

900V-950V CoolMOS™ N-Channel Power MOSFET

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.\n Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance i • Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss\n• Best-in-class DPAK RDS(on) of 450 mΩ\n• Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V\n• Integrated Zener diode ESD protection up to Class 2 (HBM)\n• Best-in-class quality and reliability\n\n优势:\n• Up to 1% effi;

Infineon

英飞凌

950V CoolMOS짧 P7 SJ Power Device

文件：1.34697 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 950V CoolMOSª P7 SJ Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Best-in-class CoolMOS™ quality and reliability • Fully optimized portfolio

文件：1.09178 Mbytes 页数：14 Pages

Infineon

英飞凌

950V CoolMOS짧 P7 SJ Power Device

文件：987.98 Kbytes 页数：14 Pages

Infineon

英飞凌