首页 >IPD95R1K2P7>规格书列表
零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IPD95R1K2P7 | 900V-950V CoolMOS™ N-Channel Power MOSFET; • Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss\n• Best-in-class DPAK RDS(on) of 450 mΩ\n• Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V\n• Integrated Zener diode ESD protection up to Class 2 (HBM)\n• Best-in-class quality and reliability\n\n优势:\n• Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3\n• Enabling higher power density designs, BOM savings, and lower assembly cost\n• Easy to drive and to design-in\n• Better production yield by reducing ESD related failures\n• Less production issues and reduced field returns\n; Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.\n Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in. \n | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
IPD95R1K2P7 | 丝印:95R1K2P7;Package:PG-TO252-3;950V CoolMOS짧 P7 SJ Power Device | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
MOSFET950VCoolMOSªP7SJPowerDevice Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability •Fullyoptimizedportfolio | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
MOSFET950VCoolMOSªP7SJPowerDevice Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classSOT-223RDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability •Fullyoptimizedportfolio | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
950VCoolMOS짧P7SJPowerDevice | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
技术参数
- OPN:
IPD95R1K2P7ATMA1
- Qualification:
Non-Automotive
- Package name:
PG-TO252-3
- VDS max:
950 V
- RDS (on) @10V max:
1200 mΩ
- ID @25°C max:
6 A
- QG typ @10V:
15 nC
- Special Features:
price/performance
- Polarity:
N
- Operating Temperature min:
-55 °C
- Operating Temperature max:
150 °C
- VGS(th) min:
2.5 V
- VGS(th) max:
3.5 V
- Technology:
CoolMOS™ P7
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-252 |
32000 |
INFINEON/英飞凌全新特价IPD95R1K2P7即刻询购立享优惠#长期有货 |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NCE新洁能 |
TO-252-3 |
5000 |
询价 | ||||
Infineon(英飞凌) |
2023+ |
PG-TO252-3 |
4550 |
全新原装正品 |
询价 | ||
Infineon(英飞凌) |
24+ |
TO-252 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-252 |
1000 |
原装现货假一罚十 |
询价 | ||
INFINOEN |
24+ |
DPAK-3 |
90000 |
一级代理进口原装现货、假一罚十价格合理 |
询价 | ||
INFINE0N |
21+ |
PG-TO252-3 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
Infineon(英飞凌) |
2447 |
PG-TO252-3 |
115000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 |
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