丝印：95R1K2；Package：PG-SOT223；MOSFET 950V CoolMOSª P7 SJ Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class SOT-223 RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Best-in-class CoolMOS™ quality and reliability • Fully optimized portfolio

文件：1.18156 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：95R1K2P7；Package：PG-TO220；MOSFET 950V CoolMOSª P7 SJ Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Best-in-class CoolMOS™ quality and reliability • Fully optimized portfolio

文件：1.09178 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：95R1K2P7；Package：PG-TO252-3；950V CoolMOS짧 P7 SJ Power Device

文件：987.98 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：95R1K2P7；Package：PG-TO251-3；950V CoolMOS짧 P7 SJ Power Device

文件：1.34697 Mbytes 页数：14 Pages

Infineon

英飞凌