丝印：95R750P7；Package：PG-TO220；MOSFET 950V CoolMOSª P7 SJ Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Best-in-class CoolMOS™ quality and reliability • Fully optimized portfolio

文件：1.11821 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：95R750P7；Package：PG-TO252-3；MOSFET 950V CoolMOSª P7 SJ Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Best-in-class CoolMOS™ quality and reliability • Fully optimized portfolio

文件：1.14857 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：95R750P7；Package：PG-TO251-3；950V CoolMOS짧 P7 SJ Power Device

文件：1.37252 Mbytes 页数：14 Pages

Infineon

英飞凌