IPD95R750P7

丝印：95R750P7；Package：PG-TO252-3；MOSFET 950V CoolMOSª P7 SJ Power Device

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability •Fullyoptimizedportfolio

IPD95R750P7

900V-950V CoolMOS™ N-Channel Power MOSFET

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.\n Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance i; • Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss\n• Best-in-class DPAK RDS(on) of 450 mΩ\n• Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V\n• Integrated Zener diode ESD protection up to Class 2 (HBM)\n• Best-in-class quality and reliability\n\n优势:\n• Up to 1% effi;

IPA95R750P7

MOSFET950VCoolMOSªP7SJPowerDevice

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability •Fullyoptimizedportfolio

IPU95R750P7

950VCoolMOS짧P7SJPowerDevice

IPG20N04S4-09

INFINEON
TDSON-8