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IPI65R380C6	文件：2.15249 Mbytes Page：19 Pages	650V CoolMOS C6 Power Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R380C6	文件：1.95871 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R380C6	文件：331.25 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPD65R380C6	文件：336.52 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPP65R380C6	文件：338.77 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA65R380C6	文件：2.15249 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R380C6	文件：316.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •PFCstages,hardswitchingPWMstagesandresonants	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA65R380C6	文件：1.95871 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R380C6	文件：1.95871 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R380C6	文件：2.15249 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R380C6	文件：189.79 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPD65R380C6	文件：336.52 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPD65R380C6	文件：2.15249 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPD65R380C6	文件：1.95871 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP65R380C6	文件：1.95871 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP65R380C6	文件：338.77 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP65R380C6	文件：2.15249 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

详细参数

型号：
IPI65R380C6
功能描述：
MOSFET N-CH 650V 10.6A TO262
RoHS：
是
类别：
分离式半导体产品 >> FET - 单
系列：
CoolMOS™
标准包装：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金属氧化物 FET
特点：
逻辑电平门
漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
C：
180 毫欧 @ 9A，10V Id 时的
Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
Vgs：
72nC @ 10V 输入电容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安装类型：
通孔
封装/外壳：
TO-220-3 整包
供应商设备封装：
TO-220FP
包装：
管件

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市英科美电子有限公司	IPI65R380C6	INFINEON/英飞凌	2021+	TO-262	17221	原装进口假一罚十	询价
深圳市创盛芯科技有限公司	IPI65R380C6	INFINEON/英飞凌	21+	TO-262	14600	全新原装现货	询价
深圳市高捷芯城科技有限公司	IPI65R380C6	Infineon(英飞凌)	23+	TO-262	8145	支持大陆交货,美金交易。原装现货库存。	询价
深圳市达恩科技有限公司	IPI65R380C6	Infineon	18+	NA	3000	进口原装正品优势供应QQ3171516190	询价
深圳市富安睿科技有限公司	IPI65R380C6	英飞凌	21+	PG-TO262-3	6000	绝对原裝现货	询价
艾睿国际（香港）有限公司	IPI65R380C6	Infineon(英飞凌)	2117+	PG-TO262-3	315000	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市晴轩时代电子有限公司	IPI65R380C6	Infineon/英飞凌	21+	PG-TO262-3	8800	公司只作原装正品	询价
深圳市杰顺创科技有限公司	IPI65R380C6	Infineon/英飞凌	21+	PG-TO262-3	6000	原装现货正品	询价
深圳市珩瑞科技有限公司	IPI65R380C6	Infineon/英飞凌	21+	PG-TO262-3	10000	原装,品质保证,请来电咨询	询价
深圳市国宇半导体科技有限公司	IPI65R380C6	INFINEON/英飞凌	23+	TO262	10000	公司只做原装正品	询价

更多IPI65R380C6供应商更新时间2024-5-24 10:53:00

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