首页 >IPI075N15N3>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IPI075N15N3 | isc N-Channel MOSFET Transistor •DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤7.5mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：075N15N；Package：PG-TO262-3；3 Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS 3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
IPI075N15N3
- 功能描述：
MOSFET OptiMOS 3 PWR TRANST 150V 100A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
TO-262 |
17185 |
原装进口假一罚十 |
询价 | ||
Infineon(英飞凌) |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEO |
25+23+ |
TO-262 |
28233 |
绝对原装正品全新进口深圳现货 |
询价 | ||
infineon/英飞凌 |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon/英飞凌 |
22+ |
TO262-3 |
6000 |
十年配单,只做原装 |
询价 | ||
Infineon/英飞凌 |
23+ |
TO262-3 |
6000 |
原装正品，支持实单 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-262 |
89630 |
当天发货全新原装现货 |
询价 | ||
INFINEON/英飞凌 |
24+ |
NA/ |
2000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
Infineon/英飞凌 |
22+ |
TO262-3 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ADI |
23+ |
TO-262 |
8000 |
只做原装现货 |
询价 |
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