OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：424.44 Kbytes 页数：11 Pages

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英飞凌

OptiMOS 3 Power-Transistor

文件：744.53 Kbytes 页数：11 Pages

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N-Channel MOSFET Transistor

文件：338.32 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：424.44 Kbytes 页数：11 Pages

INFINEON

英飞凌

3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：744.54 Kbytes 页数：11 Pages

INFINEON

英飞凌