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IPD100N04S4-02

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) : 4mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fa

文件:334.95 Kbytes 页数:2 Pages

ISC

无锡固电

IPD100N04S4L-02

丝印:4N04L02;Package:PG-TO252-3-313;OptiMOS®-T2 Power-Transistor

Features • OptiMOSTM - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100 Avalanche tested

文件:237.34 Kbytes 页数:9 Pages

Infineon

英飞凌

IPD105N03LG

OptiMOS3 Power-Transistor

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:1.236 Mbytes 页数:12 Pages

Infineon

英飞凌

IPD10N03LA

丝印:10N03LA;Package:TO-252-3-11;OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件:412.96 Kbytes 页数:11 Pages

Infineon

英飞凌

IPD10N03LA

丝印:10N03LA;Package:TO-252-3-11;OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件:403.13 Kbytes 页数:12 Pages

Infineon

英飞凌

IPD10N03LAG

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件:403.13 Kbytes 页数:12 Pages

Infineon

英飞凌

IPD100N04S4-02

OptiMOS-T2 Power-Transistor

文件:160.1 Kbytes 页数:9 Pages

Infineon

英飞凌

IPD100N06S4-03

OptiMOS-T2 Power-Transistor

文件:168.75 Kbytes 页数:9 Pages

Infineon

英飞凌

IPD105N04LG

OptiMOS3 Power-Transistor

文件:236.24 Kbytes 页数:9 Pages

Infineon

英飞凌

IPD100N06S4-03

60 V、N 沟道、最大 3.5 mΩ、汽车 MOSFET、DPAK、OptiMOS ™ -T2

• N沟道 - 增强模式\n • 符合汽车 AEC Q101 标准\n • MSL1 最高回流温度可达 260°C 峰值\n • 工作温度为 175°C\n • 绿色产品(符合 RoHS 标准)\n • 100% Avalanche 测试\n • 超低 RDS(on)\n • 超高ID\n • 支持 PPAP 的设备;

Infineon

英飞凌

详细参数

  • 型号:

    IPD10

  • 功能描述:

    MOSFET N-Channel MOSFET 20-200V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON
2012+
TO-252
12000
全新原装,绝对正品,公司现货供应。
询价
INFINEON
24+
TO252-3
8866
询价
INFINEO
25+
TO-252
50
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINE0N
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEON
23+
NA
1640
专做原装正品,假一罚百!
询价
INFINEON
24+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
INFINEON
专业铁帽
TO-252
389
原装铁帽专营,代理渠道量大可订货
询价
Infineon/英飞凌
20+
TO-252
67500
原装优势主营型号-可开原型号增税票
询价
Infineon Technologies
21+
PG-TO252-3
2500
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
INFINEON/英飞凌
23+
TO-252D-PAK
24190
原装正品代理渠道价格优势
询价
更多IPD10供应商 更新时间2025-11-23 11:04:00