IPC26N10NR中文资料下载原装现货英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IPC26N10NR	文件：901.38 Kbytes Page：5 Pages	N-channel enhancement mode 文件：901.38 Kbytes 页数：5 Pages	Infineon 英飞凌	Infineon
PHP26N10E	文件：71.48 Kbytes Page：7 Pages	PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies 文件：71.48 Kbytes 页数：7 Pages	PHI 飞利浦	PHI
EMB26N10	文件：211.41 Kbytes Page：5 Pages	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor 文件：211.41 Kbytes 页数：5 Pages	EXCELLIANCE 杰力科技	EXCELLIANCE
EMB26N10A	文件：231.01 Kbytes Page：6 Pages	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 30mΩ ID 50A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free 文件：231.01 Kbytes 页数：6 Pages	EXCELLIANCE 杰力科技	EXCELLIANCE
EMB26N10E	文件：220.34 Kbytes Page：5 Pages	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 30mΩ ID 50A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free 文件：220.34 Kbytes 页数：5 Pages	EXCELLIANCE 杰力科技	EXCELLIANCE

更多IPC26N10NR供应商更新时间2025-10-13 11:04:00