OptiMOS Power-Transistor

文件：160.78 Kbytes 页数：8 Pages

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OptiMOS Power-Transistor

文件：164.14 Kbytes 页数：8 Pages

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OptiMOS Power-Transistor

文件：164.45 Kbytes 页数：8 Pages

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OptiMOS Power-Transistor

文件：161.43 Kbytes 页数：8 Pages

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20V-650V汽车级MOSFET

• • N-channel - Enhancement mode\n • • Automotive AEC Q101 qualified\n • • MSL1 up to 260°C peak reflow\n • • 175°C operating temperature\n • • Green package (lead free)\n • • Ultra low Rds(on)\n • • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest;

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55 V、N 沟道、最大 7.7 mΩ、汽车 MOSFET、D2PAK、OptiMOS ™

• • N-channel - Enhancement mode\n • • Automotive AEC Q101 qualified\n • • MSL1 up to 260°C peak reflow\n • • 175°C operating temperature\n • • Green package (lead free)\n • • Ultra low Rds(on)\n • • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest;

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英飞凌

20V-650V汽车级MOSFET

• N-channel - Enhancement mode\n • • Automotive AEC Q101 qualified\n • • MSL1 up to 260°C peak reflow\n • • 175°C operating temperature\n • • Green package (lead free)\n • • Ultra low Rds(on)\n • • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest c;

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