Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching application

文件：260.89 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS3 Power-Transistor

Features • N-channel, normal level • Ecellect gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21

文件：555.77 Kbytes 页数：9 Pages

Infineon

英飞凌

Material Content Data Sheet

文件：33.11 Kbytes 页数：1 Pages

Infineon

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OptiMOS(TM)3 Power-Transistor

文件：285.7 Kbytes 页数：9 Pages

Infineon

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Material Content Data Sheet

文件：33.11 Kbytes 页数：1 Pages

Infineon

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THRU-HOLE INDUCTORS IPA Series & IPR Series

文件：75.13 Kbytes 页数：1 Pages

RFE

RFE international

N 沟道功率 MOSFET

OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。 • 优化直流-直流转换器技术\n• 出色的栅极电荷 x R DS(ON) 产品 (FOM)\n• 出色的耐热性\n• 双面冷却\n• 寄生电感低\n• 纤薄外形 (<0.7mm)\n• N通道，正常电平\n• 100% 经过雪崩测试\n• 无铅镀层;符合 RoHS\n\n\n优势:;

Infineon

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N 沟道功率 MOSFET

The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part. • Excellent switching performance\n• World’s lowest R DS(on)\n• Very low Q g and Q gd\n• Excellent gate charge x R DS(on) product (FOM)\n• RoHS compliant-halogen free\n• MSL1 rated 2\n\n优势:\n• Environmentally friendly\n• Increased efficiency\n• Highest power density\n• Less paralleling required\n• S;

Infineon

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