丝印：032N06N；Package：PG-TO220-3-31；OptiMOSTM3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：337.72 Kbytes 页数：9 Pages

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

文件：260.649 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道功率 MOSFET

OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and f • Excellent gate charge x R DS(on) product (FOM)\n• Very low on-resistance R DS(on)\n• Ideal for fast switching applications\n• RoHS compliant - halogen free\n• MSL1 rated\n\n优势:\n• Highest system efficiency\n• Less paralleling required\n• Increased power density\n• System cost reduction\n• Very low;

Infineon

英飞凌

OptiMOSTM3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：337.72 Kbytes 页数：9 Pages

Infineon

英飞凌