isc N-Channel MOSFET Transistor

• DESCRITION • Device for use in a wide variety of applications • FEATURES • Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max) • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：300.12 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：030N10N；Package：PG-TO220-FP；OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：283.44 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：030N10N；Package：PG-TO220-FP；OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：340.97 Kbytes 页数：9 Pages

INFINEON

英飞凌

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：340.97 Kbytes 页数：9 Pages

INFINEON

英飞凌

StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.04416 Mbytes 页数：10 Pages

INFINEON

英飞凌

StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.04416 Mbytes 页数：10 Pages

INFINEON

英飞凌

StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.04416 Mbytes 页数：10 Pages

INFINEON

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Material Content Data Sheet

文件：33.13 Kbytes 页数：1 Pages

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Material Content Data Sheet

文件：33.13 Kbytes 页数：1 Pages

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英飞凌

丝印：030N10NS；Package：PG-TO220；StrongIRFETTM 2 Power-Transistor

文件：1.03348 Mbytes 页数：10 Pages

INFINEON

英飞凌