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制造商: Guerrilla RF
产品种类: 射频放大器
安装风格: SMD/SMT
封装 / 箱体: DFN-6
类型: Bradband_Gain Block
技术: GaAs
工作频率: 0.05 GHz to 3.8 GHz
P1dB - 压缩点: 22.5 dBm
增益: 15 dB
工作电源电压: 2.7 V to 5 V
NF—噪声系数: 1.9 dB
测试频率: 900 MHz
OIP3 - 三阶截点: 40 dBm
工作电源电流: 90 mA
最小工作温度: - 40 C
最大工作温度: + 105 C
系列: GRF2012
封装: Cut Tape
封装: MouseReel
封装: Reel
商标: Guerrilla RF
通道数量: 1 Channel
CNHTS: 8542319000
开发套件: GRF2012-EVB
HTS代码: 8542330001
MXHTS: 85423301
Pd-功率耗散: 1.2 W
产品类型: RF Amplifier
工厂包装数量: 2500
子类别: Wireless & RF Integrated Circuits
GRF2011 GRF2012 Guerrilla RF GRF Gain Block Amplifiers are broadband， low noise linear gain blocks designed for small cell， wireless infrastructure and_other high performance RF applications.
The GRF2003 offer strong RF performance over 0.5 to 10.0GHz with a single match. With optimized external components， the device can be operated down to 100MHz.
The GRF2012 exhibits outstanding broadband_NF， linearity over 700 to 3800MHz with a single match.
The GRF3042 is designed for applications in the 0.05 to 13.0GHz spectrum， exhibiting a typical low noise figure (NF) of 3.5dB along with high gain. This resistively biased device employs an external resistor in series with VDD to set a nominal IDDQ of 45mA. GRF3042 is internally matched to 50Ω at the input and_output ports.
The GRF3044 is designed for applications up to 11.0GHz， exhibiting a typical low noise figure (NF) of 1.8dB along with high gain. The device employs an external resistor in series with VDD to set a nominal IDDQ of 100mA. GRF3044 is internally matched to 50Ω at the input and_output ports.
GRF2003 Features
Reference 5V/55mA/6.0GHz
Gain 12.0dB
OP1dB 14.0dBm
OIP3 27.5dBm
Eval Board NF 3.8dB
Flexible Bias Voltage and_Current
Internally Matched to 50Ω
Process， GaAs pHEMT
GRF2012 Features
Reference 5V/90mA/900MHz
Gain 15.0dB
OIP3 40.0dBm;_
OP1dB 22.5dBm
NF 1.9dB
Internally Matched to 50Ω
Process， GaAs pHEMT
GRF3042 Features
Reference 4.0GHz;_Iddq: 45mA
Gain 14.3dB
OP1dB 14.0dBm
OIP3 26.0dBm
NF 3.0dB
Internally Matched to 50Ω
Process， GaAs pHEMT
GRF3044 Features
Reference 4.0GHz;_Iddq: 100mA
Gain 16.6dB
OP1dB 19.8dBm
OIP3 31.5dBm
NF 1.8dB
Internally Matched to 50Ω
Process， GaAs pHEMT
Applications
Microwave Backhaul
C/X -Band_Amplifiers
General Purpose Amplifiers
Instrumentation
High Performance Gain Block
Linear Driver Amplifier
Small Cells and_Cellular Repeaters
IF Amplifier
TDD Systems
GRF2011
GRF2012
