■ Performance—110/115/120/150 ns Initial Access Speed—125 ns Initial Access Speed (256 Mbitdensity only)—25 ns Asynchronous Page mode Reads—30 ns Asynchronous Page mode Reads(256Mbit density only)—32-Byte Write Buffer—6.8 µs per byte effectiveprogramming time■ Software—Program and Erase suspend support—Flash Data Integrator (FDI), CommonFlash Interface (CFI) Compatible■ Security—128-bit Protection Register—64-bit Unique Device Identifier—64-bit User Programmable OTP Cells—Absolute Protection with VPEN = GND—Individual Block Locking—Block Erase/Program Lockout duringPower Transitions■ Architecture—Multi-Level Cell Technology: HighDensity at Low Cost—High-Density Symmetrical 128-KbyteBlocks—256 Mbit (256 Blocks) (0.18µm only)—128 Mbit (128 Blocks)—64 Mbit (64 Blocks)—32 Mbit (32 Blocks)■ Quality and Reliability—Operating Temperature:-40 °C to +85 °C—100K Minimum Erase Cycles per Block—0.18 µm ETOX™ VII Process (J3C)—0.25 µm ETOX™ VI Process (J3A)■ Packaging and Voltage—56-Lead TSOP Package—64-Ball Intel® Easy BGA Package—Lead-free packages available—48-Ball Intel® VF BGA Package (32 and64 Mbit) (x16 only)—VCC = 2.7 V to 3.6 V—VCCQ = 2.7 V to 3.6 V
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