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TLC272CDR原装现货热卖

2023-2-27 10:31:00
  • Trimmed Offset Voltage: TLC277 . . . 500 μV Max at 25°C, VDD = 5 V  Input Offset Voltage Drift ...Typically 0.1 μV/Month, Including the First 30 Days  Wide Range of Supply Voltages Over Specified Temperature Range: 0°C to 70°C . . . 3 V to 16 V –40°C to 85°C . . . 4 V to 16 V –55

Trimmed Offset Voltage:

TLC277 . . . 500 μV Max at 25°C,

VDD = 5 V

 Input Offset Voltage Drift ...Typically

0.1 μV/Month, Including the First 30 Days

 Wide Range of Supply Voltages Over

Specified Temperature Range:

0°C to 70°C . . . 3 V to 16 V

–40°C to 85°C . . . 4 V to 16 V

–55°C to 125°C . . . 4 V to 16 V

 Single-Supply Operation

 Common-Mode Input Voltage Range

Extends Below the Negative Rail (C-Suffix,

I-Suffix types)

 Low Noise ...Typically 25 nV/√Hz at

f = 1 kHz

 Output Voltage Range Includes Negative

Rail

 High Input impedance . . . 1012 Ω Typ

 ESD-Protection Circuitry

 Small-Outline Package Option Also

Available in Tape and Reel

 Designed-In Latch-Up Immunity



In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers

without the power penalties of bipolar technology. General applications such as transducer interfacing, analog

calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and

TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote

and inaccessible battery-powered applications. The common-mode input voltage range includes the negative

rail.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density

system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages

up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling

these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized

for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military

temperature range of –55°C to 125°C.

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