丝印：65R033M2；Package：PG-TO247-4；SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.02603 Mbytes 页数：17 Pages

INFINEON

英飞凌

CoolSiC ™ MOSFET 650 V G2，采用 TO-247-4 封装

• Excellent figures of merit (FOMs)\n• Best in class RDS(on)\n• High robustness and overall quality\n• Flexible driving voltage range\n• Support for unipolar driving (VGSoff=0)\n• Best immunity against turn-on effects\n• Improved package interconnect with .XT\n• 4-pin package\n\n优势:\n• Enables BOM s;

Infineon

英飞凌

CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.40206 Mbytes 页数：17 Pages

INFINEON

英飞凌

CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.36268 Mbytes 页数：18 Pages

INFINEON

英飞凌

SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：934.1 Kbytes 页数：16 Pages

INFINEON

英飞凌