IMT65R033M2H

丝印：65R033M2；Package：PG-HSOF-8；CoolSiC™ MOSFET 650 V G2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

IMT65R033M2H

CoolSiC™ MOSFET 650 V G2 in TOLL package, 33 mΩ; • Excellent figures-of-merit (FOMs)\n• Best in class RDS(on)\n• Outstanding robustness\n• Flexible driving voltage range\n• Pin-to-pin compatible with all 8x8 FETs\n• Improved package interconnect with .XT\n• Tj,max=175°C\n• 12k-cycle in TCoB\n\n优势:\n• Enables BOM savings\n• Maximizes the system performance per $\n• Highest reliability and longer lifetime\n• Enables top efficiency and power density\n• Small footprint to more power density\n• Most compact daughter card design\n• Fully leverages SiC in a small footprint\n \n\n\n;

IMBG65R033M2H

CoolSiC™MOSFET650VG2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

IMTA65R033M2H

SiCMOSFETCoolSiC™MOSFET650VG2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

IMW65R033M2H

SiCMOSFETCoolSiC™MOSFET650VG2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

IMZA65R033M2H

SiCMOSFETCoolSiC™MOSFET650VG2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •