IMT65R107M1H

Marking：65R107M1；Package：PG-HSOF-8；MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

Features •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increasedavalanchecapability •Compatib

IMT65R107M1H

碳化硅 MOSFET 单管; \n优势:\n• Enable high system power density and high switching operations\n• Enable cheaper and faster SMD assembly\n• Ease of use and compatibility with existing vendors\n• Reduced switching losses\n• Lower case temperature and higher reliability\n• Enables easy design-in with complementing Infineon products like CoolMOS™ and CoolGaN™\n;

IMT65R107M1HXUMA1

Package：8-PowerSFN；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：SILICON CARBIDE MOSFET

IMBG65R107M1H

650VCoolSiC짧M1SiCTrenchPowerDevice

IMW65R107M1H

650VCoolSiC짧M1SiCTrenchPowerDevice

IMZA65R107M1H

650VCoolSiC짧M1SiCTrenchPowerDevice