丝印：12M2H078；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 20 A at TC = 100°C • RDS(on) = 78 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit

文件：1.37193 Mbytes 页数：17 Pages

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CoolSiC ™ MOSFET 分立器件 1200 V G2，采用 TO-247 4 引脚高爬电距离封装

• RDS(on)= 78 mΩ at VGS= 18 V, Tvj= 25°C\n• Very low switching losses\n• Wider max. VGSrange from -10 V to +25 V\n• Overload operation up to Tvj= 200°C\n• Short circuit withstand time 2 µs\n• Benchmark gate threshold voltage 4.2 V\n• Robust against parasitic turn on\n• .XT interconnection technology;

Infineon

英飞凌

CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 21 A at TC = 100°C • RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.3019 Mbytes 页数：17 Pages

Infineon

英飞凌

CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 22 A at TC = 100°C • RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.24035 Mbytes 页数：17 Pages

Infineon

英飞凌