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IMBG120R090M1H中文资料CoolSiC ™ 1200 V SiC 沟槽MOSFET，采用TO-263-7封装数据手册Infineon规格书
IMBG120R090M1H规格书详情
特性 Features
优势:
• Efficiency improvement
• Enabling higher frequency
• Increased power density
• Cooling effort reduction
• Reduction of system complexity and cost
• SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO2637 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
INFINEON |
22+ |
PG-TO263-7 |
1000 |
22+ |
询价 | ||
Infineon |
24+ |
PG-TO263-7 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
INFINEON/英飞凌 |
22+ |
PG-TO263-7 |
3000 |
原装正品 |
询价 | ||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
INFINEON |
24+ |
PG-TO263-7 |
39500 |
进口原装现货 支持实单价优 |
询价 | ||
INFINEON |
23+ |
PG-TO263-7 |
6740 |
专注配单,只做原装进口现货 |
询价 | ||
Infineon(英飞凌) |
25+ |
TO-263-8 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
INFINEON |
23+ |
N/A |
7000 |
询价 |
