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IMBG120R060M1H中文资料CoolSiC ™ 1200 V SiC 沟槽MOSFET，采用TO-263-7封装数据手册Infineon规格书
IMBG120R060M1H规格书详情
特性 Features
优势:
• Efficiency improvement
• Enabling higher frequency
• Increased power density
• Cooling effort reduction
• Reduction of system complexity and cost
• SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
PG-TO263-7 |
3000 |
原装正品 |
询价 | ||
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
INFINEON |
23+ |
GOOP |
8000 |
只做原装现货 |
询价 | ||
INFINEON |
24+ |
PG-TO263-7 |
39500 |
进口原装现货 支持实单价优 |
询价 | ||
INFINEON/英飞凌 |
24+ |
PG-TO263-7 |
2000 |
绝对原装正品现货 假一罚十 |
询价 | ||
Infineon |
328 |
只做正品 |
询价 | ||||
Infineon Technologies |
25+ |
30000 |
原装现货,支持实单 |
询价 | |||
Infineon(英飞凌) |
24+ |
标准封装 |
7078 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
Infineon Technologies |
23+ |
PG-TO263-7 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
INFINEON |
22+ |
PG-TO263-7 |
1000 |
22+ |
询价 |
