首页>IMBG120R030M1H>规格书详情
IMBG120R030M1H中文资料CoolSiC ™ 1200 V SiC 沟槽MOSFET，采用TO-263-7封装数据手册Infineon规格书
IMBG120R030M1H规格书详情
特性 Features
优势:
• Efficiency improvement
• Enabling higher frequency
• Increased power density
• Cooling effort reduction
• Reduction of system complexity and cost
• SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
23+ |
PG-TO263-7 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-263-7 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
INFINEON |
24+ |
con |
10000 |
查现货到京北通宇商城 |
询价 | ||
INFINEON |
24+ |
TO263-7 |
15000 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-263-7 |
60000 |
询价 | |||
INFINEON |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271731邹小姐 |
询价 | ||
INFINEON |
23+ |
GOOP |
7000 |
询价 | |||
Infineon(英飞凌) |
24+ |
TO263-7 |
1524 |
原厂直供,支持账期,免费供样,技术支持 |
询价 |
