CoolSiC ™ 1700 V SiC 沟槽MOSFET，采用TO-263-7封装

\n优势:\n• 1700 V SiC MOSFET enables simple single-ended fly-back topology at high efficiency level for use in auxiliary power supplies\n• SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink\n• Reduced isolation effort due to extended creepage and cl;

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丝印：170M1650；Package：PG-TO263-7；CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.27879 Mbytes 页数：16 Pages

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CoolSiC™ 1700 V SiC Trench MOSFET

Features • VDSS = 1700 V at Tvj = 25°C • IDDC = 7.5 A at TC = 25°C • RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C • Optimized for fly-back topologies • 12 V / 0 V gate-source voltage compatible with most fly-back controllers • Very low switching losses • Benchmark gate threshold voltage, VGS(

文件：1.28513 Mbytes 页数：13 Pages

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TO263-7

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TO263-7

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