EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

文件：4.24411 Mbytes 页数：34 Pages

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SiC N-Channel MOSFET

FEATURES · Drain Current -ID= 5.2A@ TC=25℃ · Drain Source Voltage -VDSS= 1700V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Typ.)@VGS= 12V APPLICATIONS · Energy generation · Industrial power supplies · Infrastructure – Charger

文件：361.06 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：170M11K0；Package：PG-TO263-7；CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.27676 Mbytes 页数：16 Pages

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CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package

\n优势:\n• 1700 V SiC MOSFET enables simple single-ended fly-back topology at high efficiency level for use in auxiliary power supplies\n• SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink\n• Reduced isolation effort due to extended creepage and cl;

Infineon

英飞凌

CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.27676 Mbytes 页数：16 Pages

Infineon

英飞凌