IMBF170R1K0M1

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features •Single-channelisolatedgatedriver •Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs •Upto6.5Atypicalpeakoutputcurrent •45nspropagationdelaywith7nspart-to-partmatching(skew) •35Vabsolutemaximumoutputsupplyvoltage •Highcommon-mode

IMBF170R1K0M1

SiC N-Channel MOSFET

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1700V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Typ.)@VGS=12V APPLICATIONS ·Energygeneration ·Industrialpowersupplies ·Infrastructure–Charger

IMBF170R1K0M1

Marking：170M11K0；Package：PG-TO263-7；CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET

IMWH170R1K0M1

CoolSiC™1700VSiCTrenchMOSFET:SiliconCarbideMOSFET

Features •VDSS=1700VatTvj=25°C •IDDC=5.4AatTC=25°C •RDS(on)=1000mΩatVGS=12V,Tvj=25°C •Optimizedforfly-backtopologies •12V/0Vgate-sourcevoltagecompatiblewithmostfly-backcontrollers •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS