IMBF170R1K0M1

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features •Single-channelisolatedgatedriver •Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs •Upto6.5Atypicalpeakoutputcurrent •45nspropagationdelaywith7nspart-to-partmatching(skew) •35Vabsolutemaximumoutputsupplyvoltage •Highcommon-mode

IMBF170R1K0M1

SiC N-Channel MOSFET

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1700V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Typ.)@VGS=12V APPLICATIONS ·Energygeneration ·Industrialpowersupplies ·Infrastructure–Charger

IMBF170R1K0M1

CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package; \n优势:\n• 1700 V SiC MOSFET enables simple single-ended fly-back topology at high efficiency level for use in auxiliary power supplies\n• SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink\n• Reduced isolation effort due to extended creepage and clearance distances of package\n• Reduced system complexity\n• High power density\n;

IMBF170R1K0M1

丝印：170M11K0；Package：PG-TO263-7；CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET

IMBG120R220M1HXTMA1

Infineon
TO263-7