丝印：170M11K0；Package：PG-TO247-3-STD-NN4.8；CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features • VDSS = 1700 V at Tvj = 25°C • IDDC = 5.4 A at TC = 25°C • RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C • Optimized for fly-back topologies • 12 V / 0 V gate-source voltage compatible with most fly-back controllers • Very low switching losses • Benchmark gate threshold voltage, VGS

文件：1.34558 Mbytes 页数：13 Pages

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丝印：170M11K0；Package：PG-TO263-7；CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.27676 Mbytes 页数：16 Pages

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