丝印：176MEP；Package：SOIC；DIFFERENTIAL BUS TRANSCEIVER

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C and −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Speed Low-Power LinBiCMOS C

文件：525.57 Kbytes 页数：21 Pages

TI

德州仪器

丝印：176MEP；Package：SOIC；DIFFERENTIAL BUS TRANSCEIVER

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C and −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Speed Low-Power LinBiCMOS C

文件：525.57 Kbytes 页数：21 Pages

TI

德州仪器

丝印：176MEP；Package：SOIC；DIFFERENTIAL BUS TRANSCEIVER

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C and −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Speed Low-Power LinBiCMOS C

文件：525.57 Kbytes 页数：21 Pages

TI

德州仪器

丝印：176MEP；Package：SOIC；DIFFERENTIAL BUS TRANSCEIVER

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C and −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Speed Low-Power LinBiCMOS C

文件：525.57 Kbytes 页数：21 Pages

TI

德州仪器