丝印：H60EPR7；Package：PG-TO247-3-U04；TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage

Features • VCE = 670 V • IC = 60 A • Pin-to-pin creepage distance > 4.8 mm • Pin-to-pin clearance distance > 3.4 mm • Optimized monolithic diode for PFC applications • Improved EMI behavior with lower dv/dt • Very low VCEsat = 1.4 V (typ.) at 25°C • Stable temperature behavior • Low tempe

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INFINEON

英飞凌

670 V、60 A TRENCHSTOP ™ IGBT7 PR7，带反并联二极管，采用 TO-247-3 引脚高爬电距离和电气间隙封装

• Improved EMI behavior with lower dv/dt\n• Very low VCEsat= 1.4 V (typ.) at 25°C\n• Higher VCE= 670 V\n• High creepage and clearance distance\n• Positive temperature coeffi. of VCEsat\n\n优势:\n• Better EMI performance\n• Advanced performance in high switching\n• More design flexibility\n• Improved i;

Infineon

英飞凌