IKW50N65H5中文资料分立式IGBT数据手册Infineon规格书

描述 Description

High Speed 650 V, 50 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as \"best-in-class\" IGBT.

特性 Features

• 650 V breakthrough voltage
• Compared to best-in-class HighSpeed 3 family
• Factor 2.5 lower Qg
• Factor 2 reduction in switching losses
• 200mV reduction in VCEsat
• Co-packed with Rapid Si-diode technology
• Low COES/EOSS
• Mild positive temperature coefficient VCEsat
• Temperature stability of Vf

优势:
• Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
• 50 V increase in the bus voltage possible without compromising reliability
• Higher power density design

简介

IKW50N65H5属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKW50N65H5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。