IKW50N60TA数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Features:
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time 5 µs
TRENCHSTOPTM and Fieldstop technology for 600 V
applications offers :
  - very tight parameter distribution
  - high ruggedness, temperature stable behavior
  - very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very soft, fast recovery anti-parallel Emitter Controlled HE diodeApplications:
Main inverter
Air – Con compressor
PTC heater
Motor drives

简介

IKW50N60TA属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKW50N60TA晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。