IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Features:\nAutomotive AEC Q101 qualified\nDesigned for DC/AC converters for Automotive Application\nVery low VCE(sat) 1.5 V (typ.)\nMaximum Junction Temperature 175 °C\nShort circuit withstand time 5 µs\nTRENCHSTOPTM and Fieldstop technology for 600 V\napplications offers :\n  - very tight parameter

Infineon

英飞凌

丝印：K50T60A；Package：PG-TO247-3；Designed for DC/AC converters for Automotive Application

Features: Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5 µs TRENCHSTOPTM and Fieldstop technology for 600 V applications offers :   - ve

文件：951.92 Kbytes 页数：14 Pages

INFINEON

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH/FS 600V 80A TO247-3

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

文件：381.74 Kbytes 页数：2 Pages

ISC

无锡固电

Preliminary Technical Information

文件：190.15 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 180mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：312.52 Kbytes 页数：2 Pages

ISC

无锡固电