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IXFQ50N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=180mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFQ50N60P3

Polar3 HiperFET Power MOSFET

IXYS

IXYS Corporation

IXFQ50N60P3

Power MOSFET

IXYS

IXYS Corporation

IXFQ50N60X

Preliminary Technical Information

IXYS

IXYS Corporation

IXFQ50N60X

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFT50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXGH50N60A

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS™process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60AS

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS™process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60B

HiPerFASTIGBT

Features •Internationalstandardpackages •HighfrequencyIGBT •LatestgenerationHDMOSTMprocess •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGJ50N60B

HiPerFASTIGBT

Features •Internationalstandardpackages •HighfrequencyIGBT •LatestgenerationHDMOSTMprocess •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGK50N60B

HiPerFASTIGBT

Features •Internationalstandardpackages •HighfrequencyIGBT •LatestgenerationHDMOSTMprocess •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGN50N60B

HiPerFASTTMIGBT

Features •InternationalstandardpackageSOT-227B •Aluminiumnitrideisolation -highpowerdissipation •Isolationvoltage3000V~ •Veryhighcurrent,fastswitchingIGBT •LowVCE(sat)forminimumon-stateconductionlosses •MOSGateturn-ondrivesimplicity •Lowcollector-to-cas

IXYS

IXYS Corporation

IXGR50N60B

HiPerFASTIGBTISOPLUS247

Features •DCBIsolatedmountingtab •MeetsTO-247ADpackageOutline •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on-drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •Switched-modeandresonant-modepowersupplies •ACmoto

IXYS

IXYS Corporation

IXGT50N60B

HiPerFASTIGBT

Features •Internationalstandardpackages •HighfrequencyIGBT •LatestgenerationHDMOSTMprocess •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXRH50N60

IGBTwithReverseBlockingcapability

Features ●IGBTwithNPT(nonpunchthrough)structure ●reverseblockingcapabilityindependentfromgatevoltage -functionofseriesdiodemonolithicallyintegrated -noexternalseriesdioderequired -softreverserecovery ●positivetemperaturecoefficientofsaturationvolta

IXYS

IXYS Corporation

IXSH50N60B

ShortCircuitSOACapability

IGBTHighSpeed ShortCircuitSOACapability Features •Internationalstandardpackage JEDECTO-247AD,andTO-247SMDforsurfacemount •GuaranteedShortCircuitSOAcapability •HighfrequencyIGBT •LatestgenerationHDMOSTMprocess •LowVCE(sat) -forminimumon-stateconducti

IXYS

IXYS Corporation

KGF50N60KDA

KECFieldStopTrenchIGBTsofferlowswitchinglosses,highenergyefficiencyandshortcircuitruggedness.

KECKEC CORPORATION

KEC株式会社

KGT50N60KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式会社

NGTB50N60FLWG

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NGTB50N60FWG

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    IXFQ50N60

  • 功能描述:

    MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
TO-3P
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS
22+
TO3P3 SC653
9000
原厂渠道,现货配单
询价
IXYS
21+
TO3P3 SC653
13880
公司只售原装,支持实单
询价
IXYS
23+
TO3P3 SC653
9000
原装正品,支持实单
询价
IXYS
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
HY
2022+
TO-220
6000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
IXYS/LITTELFUSE
23+
TO-3P
510
只做原装提供一站式配套供货中利达
询价
更多IXFQ50N60供应商 更新时间2024-9-22 14:15:00