IKW40N120CS6数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

High Speed 1200 V, 40 A hard-switching TRENCHSTOP™ IGBT6 co-packed with a soft and fast recovery full current anti-parallel diode in a TO247 package is designed to reach the best compromise between switching and conduction losses.

特性 Features

• High efficiency in hard switching and resonant topologies
• Low saturation voltage if 1.85 V combined with low switching losses
• Easy paralleling capability due to positive temperature coefficient in VCEsat
• Low EMI
• Low Gate Charge QG
• Very soft, fast recovery anti-parallel diode
• High ruggedness, temperature stable behaviour
• Very tight parameter distribution

优势:
• Lowest losses on IGBT, high system efficiency for higher power output
• Fast and easy replacement of predecessor H3 technology
• High device reliability and lifetime expectancy

简介

IKW40N120CS6属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKW40N120CS6晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。