丝印：K40MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features • VCE = 1200 V • IC = 40 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C • Optimized for high efficiency in high sp

文件：1.40569 Mbytes 页数：17 Pages

Infineon

英飞凌

Trench Field-Stop Technology IGBT

FEATURES · Low Saturation Voltage:VCE(sat)=1.7V@IC=40A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · String Inverter

文件：337.06 Kbytes 页数：3 Pages

ISC

无锡固电

IGBT

DESCRIPTION · Anti-Parallel Fast Diode · Avalanche Rated · Short Circuit Capability APPLICATIONS · Power Inverters · UPS · Motor Drives

文件：342.1 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：K40H1203；Package：PG-TO247-3；1200V high speed switching series third generation

Features: TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt

文件：2.19149 Mbytes 页数：16 Pages

Infineon

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Low Loss DuoPack : IGBT in 2nd generation TrenchStop

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode ● Best in class TO247 ● Short circuit withstand time – 10s ● Designed for : - Frequency Converters - Uninterrupted Power Supply ● TrenchStop® 2nd generation for 1200 V

文件：380.42 Kbytes 页数：15 Pages

Infineon

英飞凌

丝印：K40MCS6；Package：PG-TO247-3；High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode

文件：1.75145 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：K40MCS7；Package：PG-TO247-3；Short circuit rugged 1200 V TRENCHSTOP??IGBT 7 technology copacked with soft and fast recovery Emitter Controlled 7 diode

文件：2.05206 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：K40T1202；Package：PG-TO-247-3；IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode

文件：598.14 Kbytes 页数：15 Pages

Infineon

英飞凌

IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode

文件：598.14 Kbytes 页数：15 Pages

Infineon

英飞凌

Discrete IGBT with Anti-Parallel Diode

High Speed 1200 V, 40 A hard-switching TRENCHSTOP™ IGBT6 co-packed with a soft and fast recovery full current anti-parallel diode in a TO247 package is designed to reach the best compromise between switching and conduction losses. • High efficiency in hard switching and resonant topologies\n• Low saturation voltage if 1.85 V combined with low switching losses\n• Easy paralleling capability due to positive temperature coefficient in VCEsat\n• Low EMI\n• Low Gate Charge QG\n• Very soft, fast recovery anti-parallel diode\n• High;

Infineon

英飞凌