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7N65

7Amps,650Volts7Amps,650Volts

DESCRIPTION TheUTC7N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

7N65

7.4Amps,650VoltsN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

7N65

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

7N65

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

7N65

650VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

7N65

DrainCurrentID=7A@TC=25C

•FEATURES •DrainCurrentID=7A@TC=25℃ •DrainSourceVoltage :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V •AvalancheEnergySpecified •FastSwitching •APPLICATIONS •Highspeedswitchingapplicationsinpowersupplies •PWM

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

7N65

N-CHANNELPOWERMOSFET

■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

7N65

7.4A,650VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

7N65

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

7N65

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description 650VN-CHANNELENHANCEMENTMODEPOWERMOSFET Features RDS(ON)=1.27Ω(Max.)@VGS=10V,ID=3.5A Fastswitching 100avalanchetested Improveddv/dtcapability Application DC-DC&DC-ACConverters UninterruptiblePowerSupply(UPS) SwitchModeLowPowerSu

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

7N65

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)

UMWUMW

友台友台半导体

7N65A

7A650VN-channelenhancementmodefieldeffecttransistor

7A650VN-channelenhancementmodefieldeffecttransistor Performancecharacteristics: ♦Fastswitchingspeed ♦Lowon-resistance ♦Lowreversetransfercapacitance ♦Lowgatecharge ♦100singlepulseavalancheenergytest ♦Improveddv/dtcapability

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

7N65A

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

7N65B

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

7N65C

650VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

7N65D

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

7N65F

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

7N65F

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

7N65F

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)

UMWUMW

友台友台半导体

7N65-F

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

供应商型号品牌批号封装库存备注价格
23+
TO-252
654800
询价
IK
23+
TO220
280000
询价
IKSEMI
23+
CHIP
50000
绝对原厂原装,长期优势可定货
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IKANOS
23+
IKANOS
3098
原厂授权代理分销现货只做原装正迈科技样品支持现货
询价
Iksemicon爱科
20+
SOP-14
16500
只做全新原装,代理分销优势渠道
询价
IKSEMICON
22+
PDSOP-14
4290
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
IKSEMICON
23+
PDSOP-14
6000
IKSEMICON一级代理
询价
IKSEMICON
1948+
SOT-23-3L
6852
只做原装正品现货!或订货假一赔十!
询价
IKSEMICON
2048+
SOT-23-3L
9852
只做原装正品现货!或订货假一赔十!
询价
DOLD
22592+
con
3
现货常备产品原装可到京北通宇商城查价格
询价
更多IK7N65D供应商 更新时间2024-5-5 14:10:00