N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：347.84 Kbytes 页数：8 Pages

UTC

友顺

7.4A, 650V   N-CHANNEL POWER MOSFET

The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching po • RDS(ON) = 1.2Ω @ VGS = 10V, ID = 3.7A \n• Avalanche energy tested \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件：2.85034 Mbytes 页数：9 Pages

SUNMATE

森美特

7A,650V N-CHANNEL MOSFET

文件：402.48 Kbytes 页数：6 Pages

KIA

可易亚半导体

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.24 Kbytes 页数：2 Pages

CHONGQING

平伟实业