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7N65G

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件:2.85034 Mbytes 页数:9 Pages

SUNMATE

森美特

7N65G-T2Q-T

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件:347.84 Kbytes 页数:8 Pages

UTC

友顺

7N65G-T2Q-T

N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件:347.88 Kbytes 页数:8 Pages

UTC

友顺

7N65G-TA3-T

N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件:206.11 Kbytes 页数:6 Pages

UTC

友顺

7N65G-TA3-T

N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件:347.88 Kbytes 页数:8 Pages

UTC

友顺

7N65G-TA3-T

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件:347.84 Kbytes 页数:8 Pages

UTC

友顺

7N65G-TF1-T

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件:347.84 Kbytes 页数:8 Pages

UTC

友顺

7N65G-TF1-T

N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件:347.88 Kbytes 页数:8 Pages

UTC

友顺

7N65G-TF1-T

N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件:206.11 Kbytes 页数:6 Pages

UTC

友顺

7N65G-TF2-T

N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件:347.88 Kbytes 页数:8 Pages

UTC

友顺

详细参数

  • 型号:

    7N65G

  • 制造商:

    UTC-IC

  • 制造商全称:

    UTC-IC

  • 功能描述:

    7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET

供应商型号品牌批号封装库存备注价格
国产
2010+
200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
UTC(友顺)
2447
TO-251
105000
80个/管一级代理专营品牌!原装正品,优势现货,长期
询价
UTC/友顺
2022+
TO-251
50000
原厂代理 终端免费提供样品
询价
UTC/友顺
23+
10000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
UTC/友顺
20+
TO-220F
32500
现货很近!原厂很远!只做原装
询价
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
询价
UTC/友顺
25+
TO-252
880000
明嘉莱只做原装正品现货
询价
UTC/友顺
25+
TO-252
30000
UTC原装正品
询价
VBsemi
24+
TO220
9000
只做原装正品 有挂有货 假一赔十
询价
VBsemi
24+
TO220
5000
全新原装正品,现货销售
询价
更多7N65G供应商 更新时间2025-12-1 20:19:00