丝印：7N80；Package：TO-220F；800V N-Channel Planar MOSFET

Features RDSON=1.3Ω @Vgs=10V, Id=3.5A Low gate Charge(typical 34.6nC) Low Crss (typical 5.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：2.65688 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：7N80；Package：TO-220F；800V N-Channel Planar MOSFET

Description 800V N-Channel Planar MOSFET 7N80 is high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device famil

文件：2.65688 Mbytes 页数：7 Pages

SHUNYE

顺烨电子

丝印：7N80；Package：TO-220C；7A 800V N-channel Enhancement Mode Power MOSFET

文件：900.32 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N80；Package：TO-220C；7A 800V N-channel Enhancement Mode Power MOSFET

文件：899.86 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N80；Package：TO-220C；7A 800V N-channel Enhancement Mode Power MOSFET

文件：900.46 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N80；Package：TO-220C；7A 800V N-channel Enhancement Mode Power MOSFET

文件：901.09 Kbytes 页数：11 Pages

WXDH

东海半导体

7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

文件：177.97 Kbytes 页数：6 Pages

UTC

友顺

7A, 800V N-CHANNEL POWER MOSFET

文件：187.96 Kbytes 页数：6 Pages

UTC

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Drain Current ID= 7A@ TC=25C

文件：137.58 Kbytes 页数：2 Pages

ISC

无锡固电

7A , 800V N-CHANNEL   POWER MOSFET

The UTC 7N80 is an N-channel mode power MOSFET usingUTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanche • RDS(on)=1.8 Ω@VGS =10V \n• 100% avalanche tested;

UTC

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