N-Channel MOSFET Transistor

文件：338.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件：340.21 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=75V, Id=82A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

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IRF

N-Channel MOSFET Transistor

文件：338.77 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

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