IIRFB38N20D技术资料参数供应代理无锡固电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IIRFB38N20D	文件：339.21 Kbytes Page：2 Pages	N-Channel MOSFET Transistor 文件：339.21 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFB38N20D	文件：133.62 Kbytes Page：11 Pages	Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current 文件：133.62 Kbytes 页数：11 Pages	IRF	IRF
IRFB38N20D	文件：339.21 Kbytes Page：2 Pages	N-Channel MOSFET Transistor 文件：339.21 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFB38N20DPBF	文件：275.56 Kbytes Page：11 Pages	HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan 文件：275.56 Kbytes 页数：11 Pages	IRF	IRF

更多IIRFB38N20D供应商更新时间2025-10-13 14:04:00